Optical spectroscopic investigation of m-plane GaN thin films
نویسندگان
چکیده
منابع مشابه
New spectroscopic data of erbium ions in GaN thin films
Optical properties of erbium ions in MBE-grown GaN-thin films are reported. Three types of sites were identified using site selective laser excitation. The main center is ascribed to the Er3+ ions substituted in the Ga sub-lattice while the two other centers are assigned to Er-related defects. The lifetimes of the S3/2 and I13/2 multiplets of the main center are strongly quenched with increasin...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2014
ISSN: 2159-3930
DOI: 10.1364/ome.4.001920